Sodium-doped molybdenum back contacts for flexible Cu(In,Ga)Se2 solar cells
Identifieur interne : 000533 ( Main/Repository ); précédent : 000532; suivant : 000534Sodium-doped molybdenum back contacts for flexible Cu(In,Ga)Se2 solar cells
Auteurs : RBID : Pascal:13-0229204Descripteurs français
- Pascal (Inist)
- Addition molybdène, Cellule solaire, Séléniure d'indium, Addition sodium, Molybdène, Pulvérisation irradiation, Evaporation, Spectrométrie SIMS, Profil profondeur, Interface, Joint grain, Défaut cristallin, Couche multimoléculaire, Multicouche, Sodium, Cuivre, Gallium, Séléniure de cuivre, Séléniure de gallium, Effet concentration, Texture, Diffraction RX, Revêtement antiréfléchissant, Acier inoxydable, Na, Substrat acier inoxydable, 8460J, 8115C, 6855L, 6855J.
- Wicri :
English descriptors
- KwdEn :
- Antireflection coating, Concentration effect, Copper, Copper selenides, Crystal defect, Depth profile, Evaporation, Gallium, Gallium selenides, Grain boundary, Indium selenides, Interface, Molybdenum, Molybdenum addition, Multilayer, Multiple layer, Secondary ion mass spectrometry, Sodium, Sodium addition, Solar cell, Sputtering, Stainless steel, Texture, X ray diffraction.
Abstract
The presence of Na in Cu(In,Ga)Se2 (CIGS) is well known to improve the solar cell performance. To incorporate Na into the CIGS absorber, Na-doped Mo (MoNa) back contact layers were grown on stainless steel foils. Three different back contact designs deposited from MoNa sputtering targets with Na concentrations of 3 at.%, 5 at.% and 10 at.% were investigated. A multistage CIGS evaporation process at low (∼450 °C) substrate temperature was used to deposit the absorbers. Measurements from time-of-flight secondary ion mass spectroscopy depth profiles indicate that Na is preferentially collected at the internal interfaces and out-diffuses from the grain boundaries of the multilayer MoNa back contact into the CIGS absorber. From the [Ga]/([In] + [Ga]) grading profiles, a more pronounced Ga dip was found with increasing Na concentration. Moreover, at high Na concentrations (10 at.% MoNa target), a change in the CIGS texture was observed by X-ray diffraction. Best solar cell efficiency of 14.4% was achieved for the 5 at.% MoNa sample without antireflective coating, which is a significant improvement compared to the 9.8% efficiency measured for the Na-free reference.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Sodium-doped molybdenum back contacts for flexible Cu(In,Ga)Se<sub>2</sub> solar cells</title><author><name sortKey="Blosch, Patrick" uniqKey="Blosch P">Patrick Blösch</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa - Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129</s1><s2>8600 Dübendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Dübendorf</wicri:noRegion></affiliation></author><author><name sortKey="Nishiwaki, Shiro" uniqKey="Nishiwaki S">Shiro Nishiwaki</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa - Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129</s1><s2>8600 Dübendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Dübendorf</wicri:noRegion></affiliation></author><author><name sortKey="Chirila, Adrian" uniqKey="Chirila A">Adrian Chirila</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa - Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129</s1><s2>8600 Dübendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Dübendorf</wicri:noRegion></affiliation></author><author><name sortKey="Kranz, Lukas" uniqKey="Kranz L">Lukas Kranz</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa - Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129</s1><s2>8600 Dübendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Dübendorf</wicri:noRegion></affiliation></author><author><name sortKey="Fella, Carolin" uniqKey="Fella C">Carolin Fella</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa - Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129</s1><s2>8600 Dübendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Dübendorf</wicri:noRegion></affiliation></author><author><name sortKey="Pianezzi, Fabian" uniqKey="Pianezzi F">Fabian Pianezzi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa - Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129</s1><s2>8600 Dübendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Dübendorf</wicri:noRegion></affiliation></author><author><name sortKey="Adelhelm, Christoph" uniqKey="Adelhelm C">Christoph Adelhelm</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>PLANSEE SE, Business Unit Coating, Metallwerk-Plansee-Strasse 71</s1><s2>6600 Reutte</s2><s3>AUT</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Autriche</country><wicri:noRegion>6600 Reutte</wicri:noRegion></affiliation></author><author><name sortKey="Franzke, Enrico" uniqKey="Franzke E">Enrico Franzke</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>PLANSEE SE, Business Unit Coating, Metallwerk-Plansee-Strasse 71</s1><s2>6600 Reutte</s2><s3>AUT</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Autriche</country><wicri:noRegion>6600 Reutte</wicri:noRegion></affiliation></author><author><name sortKey="Buecheler, Stephan" uniqKey="Buecheler S">Stephan Buecheler</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa - Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129</s1><s2>8600 Dübendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Dübendorf</wicri:noRegion></affiliation></author><author><name sortKey="Tiwari, Ayodhya Nath" uniqKey="Tiwari A">Ayodhya Nath Tiwari</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa - Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129</s1><s2>8600 Dübendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Dübendorf</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0229204</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0229204 INIST</idno><idno type="RBID">Pascal:13-0229204</idno><idno type="wicri:Area/Main/Corpus">000B18</idno><idno type="wicri:Area/Main/Repository">000533</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Antireflection coating</term><term>Concentration effect</term><term>Copper</term><term>Copper selenides</term><term>Crystal defect</term><term>Depth profile</term><term>Evaporation</term><term>Gallium</term><term>Gallium selenides</term><term>Grain boundary</term><term>Indium selenides</term><term>Interface</term><term>Molybdenum</term><term>Molybdenum addition</term><term>Multilayer</term><term>Multiple layer</term><term>Secondary ion mass spectrometry</term><term>Sodium</term><term>Sodium addition</term><term>Solar cell</term><term>Sputtering</term><term>Stainless steel</term><term>Texture</term><term>X ray diffraction</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Addition molybdène</term><term>Cellule solaire</term><term>Séléniure d'indium</term><term>Addition sodium</term><term>Molybdène</term><term>Pulvérisation irradiation</term><term>Evaporation</term><term>Spectrométrie SIMS</term><term>Profil profondeur</term><term>Interface</term><term>Joint grain</term><term>Défaut cristallin</term><term>Couche multimoléculaire</term><term>Multicouche</term><term>Sodium</term><term>Cuivre</term><term>Gallium</term><term>Séléniure de cuivre</term><term>Séléniure de gallium</term><term>Effet concentration</term><term>Texture</term><term>Diffraction RX</term><term>Revêtement antiréfléchissant</term><term>Acier inoxydable</term><term>Na</term><term>Substrat acier inoxydable</term><term>8460J</term><term>8115C</term><term>6855L</term><term>6855J</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Molybdène</term><term>Sodium</term><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The presence of Na in Cu(In,Ga)Se<sub>2</sub> (CIGS) is well known to improve the solar cell performance. To incorporate Na into the CIGS absorber, Na-doped Mo (MoNa) back contact layers were grown on stainless steel foils. Three different back contact designs deposited from MoNa sputtering targets with Na concentrations of 3 at.%, 5 at.% and 10 at.% were investigated. A multistage CIGS evaporation process at low (∼450 °C) substrate temperature was used to deposit the absorbers. Measurements from time-of-flight secondary ion mass spectroscopy depth profiles indicate that Na is preferentially collected at the internal interfaces and out-diffuses from the grain boundaries of the multilayer MoNa back contact into the CIGS absorber. From the [Ga]/([In] + [Ga]) grading profiles, a more pronounced Ga dip was found with increasing Na concentration. Moreover, at high Na concentrations (10 at.% MoNa target), a change in the CIGS texture was observed by X-ray diffraction. Best solar cell efficiency of 14.4% was achieved for the 5 at.% MoNa sample without antireflective coating, which is a significant improvement compared to the 9.8% efficiency measured for the Na-free reference.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>535</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Sodium-doped molybdenum back contacts for flexible Cu(In,Ga)Se<sub>2</sub> solar cells</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>E-MRS 2012 Symposium B</s1></fA09><fA11 i1="01" i2="1"><s1>BLÖSCH (Patrick)</s1></fA11><fA11 i1="02" i2="1"><s1>NISHIWAKI (Shiro)</s1></fA11><fA11 i1="03" i2="1"><s1>CHIRILA (Adrian)</s1></fA11><fA11 i1="04" i2="1"><s1>KRANZ (Lukas)</s1></fA11><fA11 i1="05" i2="1"><s1>FELLA (Carolin)</s1></fA11><fA11 i1="06" i2="1"><s1>PIANEZZI (Fabian)</s1></fA11><fA11 i1="07" i2="1"><s1>ADELHELM (Christoph)</s1></fA11><fA11 i1="08" i2="1"><s1>FRANZKE (Enrico)</s1></fA11><fA11 i1="09" i2="1"><s1>BUECHELER (Stephan)</s1></fA11><fA11 i1="10" i2="1"><s1>TIWARI (Ayodhya Nath)</s1></fA11><fA12 i1="01" i2="1"><s1>EDOFF (Marika)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>ROMEO (Alessandro)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>SCHEER (Roland)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>SHAFARMAN (William)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>KATAGIRI (Hirono)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa - Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129</s1><s2>8600 Dübendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="02"><s1>PLANSEE SE, Business Unit Coating, Metallwerk-Plansee-Strasse 71</s1><s2>6600 Reutte</s2><s3>AUT</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>European Materials Research Society (E-MRS)</s1><s2>Strasbourg</s2><s3>FRA</s3><s9>org-cong.</s9></fA18><fA20><s1>214-219</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000504170550460</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>23 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0229204</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The presence of Na in Cu(In,Ga)Se<sub>2</sub> (CIGS) is well known to improve the solar cell performance. To incorporate Na into the CIGS absorber, Na-doped Mo (MoNa) back contact layers were grown on stainless steel foils. Three different back contact designs deposited from MoNa sputtering targets with Na concentrations of 3 at.%, 5 at.% and 10 at.% were investigated. A multistage CIGS evaporation process at low (∼450 °C) substrate temperature was used to deposit the absorbers. Measurements from time-of-flight secondary ion mass spectroscopy depth profiles indicate that Na is preferentially collected at the internal interfaces and out-diffuses from the grain boundaries of the multilayer MoNa back contact into the CIGS absorber. From the [Ga]/([In] + [Ga]) grading profiles, a more pronounced Ga dip was found with increasing Na concentration. Moreover, at high Na concentrations (10 at.% MoNa target), a change in the CIGS texture was observed by X-ray diffraction. Best solar cell efficiency of 14.4% was achieved for the 5 at.% MoNa sample without antireflective coating, which is a significant improvement compared to the 9.8% efficiency measured for the Na-free reference.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15C</s0></fC02><fC02 i1="03" i2="3"><s0>001B60H55L</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Addition molybdène</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Molybdenum addition</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Adición molibdeno</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Solar cell</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Célula solar</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Séléniure d'indium</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Addition sodium</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Sodium addition</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Adición sodio</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Molybdène</s0><s2>NC</s2><s2>FX</s2><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Molybdenum</s0><s2>NC</s2><s2>FX</s2><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Molibdeno</s0><s2>NC</s2><s2>FX</s2><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Pulvérisation irradiation</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Sputtering</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Pulverización irradiación</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Evaporation</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Evaporation</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Evaporación</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Spectrométrie SIMS</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Secondary ion mass spectrometry</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Espectrometría SIMS</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Profil profondeur</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Depth profile</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Perfil profundidad</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Interface</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Interface</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Interfase</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Joint grain</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Grain boundary</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Limite grano</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Défaut cristallin</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Crystal defect</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Defecto cristalino</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Couche multimoléculaire</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Multilayer</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Capa multimolecular</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Multicouche</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Multiple layer</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Capa múltiple</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Sodium</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Sodium</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Sodio</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Cobre</s0><s2>NC</s2><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Gallium</s0><s2>NC</s2><s2>FX</s2><s5>17</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Gallium</s0><s2>NC</s2><s2>FX</s2><s5>17</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Galio</s0><s2>NC</s2><s2>FX</s2><s5>17</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Séléniure de cuivre</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Séléniure de gallium</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Gallium selenides</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Effet concentration</s0><s5>29</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Concentration effect</s0><s5>29</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Efecto concentración</s0><s5>29</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Texture</s0><s5>30</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Texture</s0><s5>30</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Textura</s0><s5>30</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Diffraction RX</s0><s5>31</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>X ray diffraction</s0><s5>31</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Difracción RX</s0><s5>31</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Revêtement antiréfléchissant</s0><s5>32</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Antireflection coating</s0><s5>32</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Revestimiento antirreflexión</s0><s5>32</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Acier inoxydable</s0><s5>33</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>Stainless steel</s0><s5>33</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Acero inoxidable</s0><s5>33</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Na</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>Substrat acier inoxydable</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="27" i2="X" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="28" i2="X" l="FRE"><s0>8115C</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="29" i2="X" l="FRE"><s0>6855L</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="30" i2="X" l="FRE"><s0>6855J</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>210</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>E-MRS Spring Meeting 2012. Symposium B "Thin Film Chalcogenide Photovoltaic Materials"</s1><s3>Strasbourg FRA</s3><s4>2012-05-14</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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